Display apparatus and method of manufacturing the same

ABSTRACT

A display apparatus includes a substrate including a display area and a sensor area, the display area including main pixels and the sensor area including auxiliary pixels and a transmission portion; a first pixel electrode and a first emission layer in each of the main pixels; a second pixel electrode and a second emission layer in each of the auxiliary pixels; an opposite electrode integrally arranged in the display area and the sensor area; and a metal layer at least partially surrounding the transmission portion, wherein the opposite electrode has an opening corresponding to the transmission portion.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2019-0020494 filed on Feb. 21, 2019 in the KoreanIntellectual Property Office (KIPO), the entire disclosure of which isincorporated herein by reference.

BACKGROUND 1. Field

One or more embodiments relate to a display apparatus and a method ofmanufacturing the display apparatus.

2. Description of the Related Art

Display apparatuses have been used for various purposes. Also, becausethe thickness and weight of the display apparatuses have been reduced, autilization range of the display apparatuses has increased.

According to use of the display apparatuses, different methods ofdesigning a shape thereof have been developed and more functions havebeen embedded in or linked to the display apparatuses.

SUMMARY

Aspects of one or more embodiments are directed toward a displayapparatus including a sensor area, in which a sensor, etc., is arranged,inside a display area. However, the above technical feature is exemplaryand the scope of the present disclosure is not limited thereto.

Additional aspects of one or more embodiments will be set forth in partin the description which follows and, in part, will be apparent from thedescription, or may be learned by practice of the presented embodiments.

According to one or more embodiments, a display apparatus includes: asubstrate including a display area and a sensor area, wherein thedisplay area includes main pixels and the sensor area includes auxiliarypixels and a transmission portion; a first pixel electrode and a firstemission layer in each of the main pixels; a second pixel electrode anda second emission layer in each of the auxiliary pixels; an oppositeelectrode integrally arranged in the display area and the sensor area;and a metal layer at least partially surrounding the transmissionportion, wherein the opposite electrode has an opening corresponding tothe transmission portion.

The display apparatus may further include: an inorganic insulating layeron the substrate, wherein the inorganic insulating layer has a firsthole corresponding to the transmission portion, and the oppositeelectrode may be on a side wall of the first hole.

The metal layer may be in the first hole.

The opening in the opposite electrode may have an area that is less thanan area of the first hole.

The display apparatus may further include: a functional layer integrallyprovided in the display area and the sensor area, the functional layerbeing between the first pixel electrode and the opposite electrode andhaving an opening corresponding to the transmission portion, wherein theopening of the opposite electrode and the opening of the functionallayer may overlap each other and form a through hole.

The metal layer may include same material as the first pixel electrode.

The metal layer may include a first metal layer surrounding thetransmission portion and a second metal layer separated from the firstmetal layer, the second metal layer at least partially surrounding thefirst metal layer.

The metal layer may include a protrusion extending towards thetransmission portion.

The display apparatus may further include: a lower electrode layer inthe sensor area, wherein the lower electrode layer may be between thesubstrate and an auxiliary thin film transistor in the auxiliary pixel.

The metal layer may include a same material as the lower electrodelayer.

The display apparatus may further include: an inorganic insulating layeron the substrate, wherein the inorganic insulating layer may have afirst hole corresponding to the transmission portion, and the metallayer may have a width that is greater than a width of the first hole.

The display apparatus may further include: a component on a lowersurface of the substrate, the component corresponding to the sensorarea.

The substrate may further include an opening area surrounded by thedisplay area, and an additional metal layer surrounding the openingarea.

The substrate may have a substrate hole corresponding to the openingarea.

According to one or more aspects, a method of manufacturing a displayapparatus including a substrate having a display area and a sensor area,the display area including main pixels and the sensor area includingauxiliary pixels and a transmission portion is provided. The methodincludes: forming a preliminary metal layer on an upper surface of thesubstrate, the preliminary metal layer overlapping the transmissionportion; forming an opposite electrode on the preliminary metal layer;irradiating a laser beam to the preliminary metal layer from a lowersurface of the substrate; and lifting off the preliminary metal layer,irradiated by the laser beam, from the substrate, wherein thepreliminary metal layer has a pattern at an edge thereof.

The preliminary metal layer may include a center portion and an edgeportion separated from the center portion, the edge portion surroundingthe center portion.

The center portion may be at least partially connected to the edgeportion.

The edge portion may include a first edge portion and a second edgeportion, the first edge portion being separated from the second edgeportion.

The first edge portion may be at least partially connected to the centerportion.

The laser beam may include an infrared ray.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readilyappreciated from the following description of the embodiments, taken inconjunction with the accompanying drawings in which:

FIG. 1 is a perspective view of a display apparatus according to anembodiment;

FIG. 2 is a cross-sectional view of a display apparatus taken along theline A-A′ of FIG. 1;

FIG. 3 is a plan view of a display apparatus according to an embodiment;

FIG. 4 is a plan view showing a part of a sensor area of FIG. 3;

FIG. 5A is a cross-sectional view of the display apparatus taken alongthe line I-I′ of FIG. 3 and line II-II′ of FIG. 4;

FIG. 5B is an enlarged view of a portion III of FIG. 5A;

FIG. 5C is a cross-sectional view of a display apparatus according to anembodiment;

FIGS. 6A-6C are cross-sectional views illustrating a method ofmanufacturing a display apparatus according to an embodiment;

FIGS. 7A-7E are plan views of shapes of preliminary metal layers appliedto one or more embodiments;

FIGS. 8A-8E are plan views of shapes of metal layers applied toembodiments;

FIG. 9 is a cross-sectional view of a display apparatus according to anembodiment;

FIG. 10A is a plan view of a display apparatus according to anembodiment;

FIG. 10B is a plan view of a display apparatus according to anembodiment; and

FIG. 11 is a cross-sectional view of a display apparatus taken along theline IV-IV′ and the line V-V of FIG. 10A.

DETAILED DESCRIPTION

Reference will now be made in detail to embodiments, examples of whichare illustrated in the accompanying drawings, wherein like referencenumerals refer to like elements throughout. In this regard, the presentembodiments may have different forms and should not be construed asbeing limited to the descriptions set forth herein. Accordingly, theembodiments are merely described below, by referring to the figures, toexplain aspects of the present description. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items. Expressions such as “at least one of,” whenpreceding a list of elements, modify the entire list of elements and donot modify the individual elements of the list. Further, the use of“may” when describing embodiments of the present invention refers to“one or more embodiments of the present invention.”

As the present disclosure allows for various suitable changes andnumerous embodiments, particular embodiments will be illustrated in thedrawings and described in detail in the written description. Theattached drawings for illustrating one or more embodiments are referredto in order to gain a sufficient understanding, the merits thereof, andthe objectives accomplished by the implementation. However, theembodiments may have different forms and should not be construed asbeing limited to the descriptions set forth herein.

The example embodiments will be described below in more detail withreference to the accompanying drawings. Those components that are thesame or are in correspondence are rendered the same reference numeralregardless of the figure number, and redundant explanations are omitted.

While such terms as “first,” “second,” etc., may be used to describevarious components, such components are not be limited to the aboveterms. The above terms are used only to distinguish one component fromanother.

An expression used in the singular encompasses the expression of theplural, unless it has a clearly different meaning in the context.

In the present specification, it is to be understood that the terms“including,” “having,” and “comprising” are intended to indicate theexistence of the features, numbers, steps, actions, components, parts,or combinations thereof disclosed in the specification, and are notintended to preclude the possibility that one or more other features,numbers, steps, actions, components, parts, or combinations thereof mayexist or may be added.

It will be understood that when a layer, region, or component isreferred to as being “formed on” another layer, region, or component, itmay be directly or indirectly formed on the other layer, region, orcomponent. That is, for example, intervening layers, regions, orcomponents may be present.

Sizes of components in the drawings may be exaggerated for convenienceof explanation. In other words, because sizes and thicknesses ofcomponents in the drawings are arbitrarily illustrated for convenienceof explanation, the following embodiments are not limited thereto.

When a certain embodiment may be implemented differently, a specificprocess order may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order.

In the embodiments below, when layers, areas, or elements or the likeare referred to as being “connected,” it will be understood that theymay be directly connected or an intervening portion may be presentbetween layers, areas or elements. For example, when layers, areas, orelements or the like are referred to as being “electrically connected,”they may be directly electrically connected, or layers, areas orelements may be indirectly electrically connected and an interveningportion may be present.

Spatially relative terms, such as “lower”, “upper” and the like, may beused herein for ease of description to describe one element or feature'srelationship to another element(s) or feature(s) as illustrated in thefigures. It will be understood that the spatially relative terms areintended to encompass different orientations of the device in use oroperation in addition to the orientation depicted in the figures. Inaddition, it will also be understood that when a layer is referred to asbeing “between” two layers, it can be the only layer between the twolayers, or one or more intervening layers may also be present.

As used herein, the term “substantially,” “about,” and similar terms areused as terms of approximation and not as terms of degree, and areintended to account for the inherent deviations in measured orcalculated values that would be recognized by those of ordinary skill inthe art.

As used herein, the terms “use,” “using,” and “used” may be consideredsynonymous with the terms “utilize,” “utilizing,” and “utilized,”respectively.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which the present disclosure belongs. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and/orthe present specification, and should not be interpreted in an idealizedor overly formal sense, unless expressly so defined herein.

FIG. 1 is a perspective view of a display apparatus 1 according to anembodiment.

Referring to FIG. 1, the display apparatus 1 includes a display area DAwherein images are displayed and a non-display area NDA wherein noimages are displayed. The display apparatus 1 may provide a main imagevia light emitted from a plurality of main pixels Pm arranged in thedisplay area DA.

The display apparatus 1 may include a sensor area SA. The sensor area SAmay be an area where a component such as a sensor using an infrared ray,a visible ray, or sound is arranged thereunder. The sensor area SA mayinclude a transmission portion TA, through which light and/or soundoutput from the component to outside or proceeding from outside to thecomponent may transmit. In one or more embodiments, when the infraredray transmits through the sensor area SA, an infrared ray transmittanceof the entire sensor area SA may be about 10% or greater, about 20% orgreater, about 25% or greater, about 50% or greater, about 85% orgreater, or about 90% or greater.

In one or more embodiments, a plurality of auxiliary pixels Pa may bearranged in the sensor area SA, and an image (e.g., a set image or apredetermined image) may be provided using the light emitted from theplurality of auxiliary pixels Pa. The image provided by the sensor areaSA is an auxiliary image having a resolution that is less than that ofan image provided by the display area DA. That is, the sensor area SAincludes the transmission portion TA, through which the light and/orsound may transmit, and thus, the number of auxiliary pixels Pa per unitarea may be less than that of the main pixels Pm per unit area in thedisplay area DA.

The sensor area SA may be at least partially surrounded by the displayarea DA, and in one or more embodiments, the sensor area SA is entirelysurrounded by the display area DA as shown in FIG. 1.

Hereinafter, according to an embodiment, it is considered that thedisplay apparatus 1 is an organic light-emitting display apparatus, butthe display apparatus 1 of the disclosure is not limited thereto. In oneor more embodiments, the display apparatus 1 may be an inorganiclight-emitting display, a quantum dot light-emitting display, etc.

Referring to FIG. 1, the sensor area SA is in a portion (upper rightportion) of the display area DA of a rectangular shape, but is notlimited thereto. The display area DA may have a circular shape, anellipse shape, or a polygonal shape such as a triangle, a pentagon,etc., and the location and/or the number of the sensor area SA may bemodified in various suitable ways.

FIG. 2 is a cross-sectional view of the display apparatus 1 according toone or more embodiments, taken along the line A-A′ of FIG. 1.

Referring to FIG. 2, the display apparatus 1 may include a display panel10 including display elements, and a component 20 corresponding to thesensor area SA.

The display panel 10 may include a substrate 100, a display elementlayer 200 on the substrate 100, and a thin film encapsulation layer 300that is an encapsulation member for sealing the display element layer200. In addition, the display panel 10 may further include a lowerprotective film 175 arranged under the substrate 100.

The substrate 100 may include glass or a polymer resin. The substrate100 including the polymer resin may be flexible, rollable, or bendable.The substrate 100 may have a multi-layered structure including a layerincluding the polymer resin and/or an inorganic layer.

The display element layer 200 may include a circuit layer including mainand auxiliary thin film transistors TFT and TFT′, an organiclight-emitting diode OLED that is a display element, and insulatinglayers IL and IL′ between the thin film transistors TFT and TFT′ and theorganic light-emitting diode OLED.

The main pixels Pm each including a main thin film transistor TFT and amain organic light-emitting diode OLED connected to the main thin filmtransistor TFT are arranged in the display area DA, and the auxiliarypixels Pa each including an auxiliary thin film transistor TFT′ and anauxiliary organic light-emitting diode OLED′ connected to the auxiliarythin film transistor TFT′ and wirings may be arranged in the sensor areaSA.

In addition, the transmission portion TA, in which the auxiliary thinfilm transistor TFT′ and display elements are not arranged (e.g., notpresent), may be located in the sensor area SA. The transmission portionTA may be understood as an area through which light/signals emitted fromthe component 20 or light/signals incident to the component 20 may betransmitted.

The component 20 may be located in the sensor area SA. The component 20may be an electronic element using light or sound. For example, thecomponent 20 may be a sensor for receiving light (e.g., an infrared raysensor), a sensor outputting and sensing light or sound to measure adistance or to sense fingerprints, etc., a small-sized lamp for emittinglight, or a speaker for outputting sound. The electronic element usinglight may use light in various suitable wavelength bands such as visiblelight, IR, ultraviolet (UV) ray, etc. A plurality of components 20 maybe arranged in the sensor area SA. For example, a light-emitting deviceand a light-receiving device may be provided in one sensor area SA asthe components 20. Alternatively, one component 20 may include alight-emitting portion and a light-receiving portion.

A lower electrode layer BSM may be arranged in the sensor area SA, andthe lower electrode layer BSM may correspond to the auxiliary pixels Pa.That is, the lower electrode layer BSM may be arranged to correspond toa lower portion of the auxiliary thin film transistor TFT′. The lowerelectrode layer BSM may prevent or partially obstruct external lightfrom reaching the auxiliary pixel Pa including the auxiliary thin filmtransistor TFT′, etc. For example, the lower electrode layer BSM mayprevent or partially obstruct the light emitted from the component 20from reaching the auxiliary pixel Pa. In addition, a constant voltage ora signal is applied to the lower electrode layer BSM to prevent orreduce damage to a pixel circuit caused by an electrostatic discharge.

The thin film encapsulation layer 300 may include at least one inorganicencapsulation layer and at least one organic encapsulation layer. Inthis regard, referring to FIG. 2, the thin film encapsulation layer 300may include first and second inorganic encapsulation layers 310 and 330,respectively, and an organic encapsulation layer 320 between the firstand second inorganic encapsulation layers 310 and 330.

The first and second inorganic encapsulation layers 310 and 330 mayinclude one or more inorganic insulating materials from among aluminumoxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide,silicon oxide, silicon nitride, and silicon oxynitride. The organicencapsulation layer 320 may include a polymer-based material. Thepolymer-based material may include an acryl-based resin, an epoxy-basedresin, polyimide, polyethylene, etc.

The lower protective film 175 is attached to a lower portion of thesubstrate 100 to protect and support the substrate 100. The lowerprotective film 175 may have an opening 1750P corresponding to thesensor area SA. Because the lower protective film 175 has the opening1750P, a light transmittance of the sensor area SA may be improved. Thelower protective film 175 may include polyethylene terephthalate (PET)or polyimide (PI).

An area of the sensor area SA may be greater than that of a region wherethe component 20 is arranged. Accordingly, an area of the opening 1750Pin the lower protective film 175 may not be equal to that of the sensorarea SA. For example, the area of the opening 1750P may be less thanthat of the sensor area SA.

In one or more embodiments, components such as an input sensing memberfor sensing a touch input, an anti-reflection member including apolarizer and a retarder, or a color filter and a black matrix, atransparent window, etc. may be further arranged on the display panel10.

In addition, in one or more embodiments, the thin film encapsulationlayer 300 is used as an encapsulation member for sealing the displayelement layer 200, but one or more embodiments are not limited thereto.For example, an encapsulation substrate that is bonded to the substrate100 via a sealant or a frit may be used as the member for encapsulatingthe display element layer 200.

FIG. 3 is a plan view of the display panel 10 according to anembodiment.

Referring to FIG. 3, the display panel 10 is arranged in the displayarea DA and includes the plurality of main pixels Pm. Each of the mainpixels Pm may include a display element such as an organiclight-emitting diode. Each of the main pixels Pm may emit light (e.g.,red light, green light, blue light, or white light, via the organiclight-emitting diode). In one or more embodiments, the main pixel Pm maybe understood as a pixel for emitting red light, green light, bluelight, or white light, as described above. The display area DA iscovered by the encapsulation member described above with reference toFIG. 2, so as to be protected against external air or moisture.

The sensor area SA may be arranged in the display area DA and theplurality of auxiliary pixels Pa may be arranged in the sensor area SA.Each of the auxiliary pixels Pa may include a display element such as anorganic light-emitting diode. Each of the auxiliary pixels Pa may emitlight (e.g., red light, green light, blue light, or white light), viathe organic light-emitting diode. In one or more embodiments, theauxiliary pixel Pa may be understood as a pixel emitting red light,green light, blue light, or white light, as described above. Inaddition, the sensor area SA includes the transmission portion TAbetween the auxiliary pixels Pa.

In one or more embodiments, one main pixel Pm and one auxiliary pixel Pamay include same pixel circuits (i.e., use the same pixel circuits).However, one or more embodiments are not limited thereto. That is, thepixel circuit included in the main pixel Pm and the pixel circuitincluded in the auxiliary pixel Pa may be different from each other.

The sensor area SA includes the transmission portion TA, and thus aresolution of the sensor area SA may be less than that of the displayarea DA. For example, the resolution of the sensor area SA may be halfthe resolution of the display area DA. In one or more embodiments, theresolution of the display area DA may be 400 ppi or greater, and theresolution of the sensor area SA may be about 200 ppi or greater.

Each of the main and auxiliary pixels Pm and Pa may be electricallyconnected to external pixels arranged in the non-display area NDA. Inthe non-display area NDA, a first scan driving circuit 110, a secondscan driving circuit 120, a terminal 140, a data driving circuit 150, afirst power supply line 160, and a second power supply line 170 may bearranged.

The first scan driving circuit 110 may provide each pixel Pm or Pa witha scan signal via a scan line SL. The first scan driving circuit 110 mayprovide each pixel Pm or Pa with an emission control signal via anemission control line EL. The second scan driving circuit 120 may bearranged in parallel with the first scan driving circuit 110 with thedisplay area DA arranged between the first scan driving circuit 110 andthe second scan driving circuit 120. Some of the pixels Pm and Paarranged in the display area DA may be electrically connected to thefirst scan driving circuit 110, and the other pixels may be electricallyconnected to the second scan driving circuit 120. In one or moreembodiments, the second scan driving circuit 120 may be omitted.

The terminal 140 may be arranged at a side of the substrate 100. Theterminal 140 may not be covered by an insulating layer (i.e., theterminal 140 may be exposed), and may be electrically connected to aprinted circuit board PCB. A terminal PCB-P of the printed circuit boardPCB may be electrically connected to the terminal 140 of the displaypanel 10. The printed circuit board PCB may transfer a signal or a powerof a controller to the display panel 10. A control signal generated bythe controller may be respectively transferred to the first and secondscan driving circuits 110 and 120 via the printed circuit board PCB. Thecontroller may provide the first and second power supply lines 160 and170 respectively with a first power voltage ELVDD and a second powervoltage and ELVSS via first and second connecting lines 161 and 171. Thefirst power voltage ELVDD is supplied to each pixel Pm or Pa via adriving voltage line PL connected to the first power supply line 160,and the second power voltage ELVSS may be provided to an oppositeelectrode of each pixel Pm or Pa connected to the second power supplyline 170.

The data driving circuit 150 is electrically connected to a data lineDL. A data signal of the data driving circuit 150 may be provided toeach of the pixels Pm and Pa via a connecting line 151 connected to theterminal 140 and the data line DL connected to the connecting line 151.Although the embodiment in FIG. 3 shows that the data driving circuit150 is arranged on the printed circuit board PCB, in one or moreembodiments, the data driving circuit 150 is arranged on the substrate100. For example, the data driving circuit 150 may be arranged betweenthe terminal 140 and the first power supply line 160.

The first power supply line 160 may include a first sub-line 162 and asecond sub-line 163 that extend in parallel with each other along anX-direction with the display area DA interposed therebetween. The secondpower supply line 170 has a loop shape having an opening side topartially surround the display area DA.

FIG. 4 is a plan view partially showing the sensor area SA of FIG. 3,and FIG. 5A is a cross-sectional view of the display apparatus takenalong the line I-I′ of FIG. 3 and the line II-II′ of FIG. 4. FIG. 5B isan enlarged view of a portion III of FIG. 5A.

Referring to FIG. 4, the auxiliary pixels Pa and the transmission areas(i.e., transmission portions) TA are arranged in the sensor area SA ofthe display apparatus according to an embodiment. A set (e.g.,predetermined) number of auxiliary pixels Pa may be continuouslyarranged to form one pixel group Pg. The pixel group Pg may include atleast one auxiliary pixel Pa. In FIG. 4, one pixel group Pg includesfour auxiliary pixels Pa arranged in two columns (e.g., two auxiliarypixels Pa per column). However, one or more embodiments are not limitedthereto. The number of the auxiliary pixels Pa and the arrangement ofthe auxiliary pixels Pa in one pixel group Pg may be modified in varioussuitable ways. For example, one pixel group Pg may include threeauxiliary pixels Pa arranged in a row.

The transmission portion TA has a high light transmittance because adisplay element is not arranged in the transmission portion TA, and aplurality of transmission areas TA may be included in the sensor areaSA. The transmission areas TA may be arranged alternately with the pixelgroups Pg along a first direction (X-direction) and/or a seconddirection (Y-direction). Alternatively, the transmission areas TA may bearranged to surround the pixel group Pg. Alternatively, the auxiliarypixels Pa may be arranged to surround the transmission portion TA.

In one or more embodiments, a metal layer ML is arranged around thetransmission portion TA so as to at least partially surround thetransmission portion TA. The metal layer ML may be understood to bearranged between the transmission portion TA and the pixel group Pg. InFIG. 4, the metal layer ML is continuously provided to surround onetransmission portion TA, but is not limited thereto. That is, the metallayer ML may be modified in various suitable ways, for example, themetal layer ML may be partially disconnected. Various suitable shapes ofthe metal layer ML will be described later with reference to FIGS.8A-8D.

Referring to FIG. 5A, the display apparatus according to an embodimentincludes the display area DA and the sensor area SA. The main pixels Pmare arranged in the display area DA, and the auxiliary pixels Pa and thetransmission portion TA are arranged in the sensor area SA.

Each of the main pixels Pm may include the main thin film transistorTFT, a main storage capacitor Cst, and the main organic light-emittingdiode OLED. Each of the auxiliary pixels Pa may include the auxiliarythin film transistor TFT′, an auxiliary storage capacitor Cst′, and theauxiliary organic light-emitting diode OLED′. The transmission portionTA may include a transmission hole TAH corresponding to the transmissionportion TA. The metal layer ML is arranged around the transmission holeTAH.

The component 20 may be arranged under the sensor area SA. The component20 may be an infrared ray (IR) sensor for transmitting/receiving theinfrared ray. Because the transmission portion TA is arranged in thesensor area SA, IR signals transmitted to/received from the component 20may transmit through the sensor area SA. For example, the light emittedfrom the component 20 may proceed along a Z-direction through thetransmission portion TA, and light generated on the outside of thedisplay apparatus and incident to the component 20 may proceed along aZ-direction through the transmission portion TA.

Hereinafter, a structure in which elements included in the displayapparatus according to the embodiment are laminated will be describedbelow.

The substrate 100 may include glass or a polymer resin. The polymerresin may include a polyethersulfone (PES), polyacrylate, polyetherimide(PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET),polyphynylene sulfide (PPS), polyarylate, polyimide (PI), polycarbonate(PC), cellulose acetate propionate (CAP), etc. The substrate 100including the polymer resin may be flexible, rollable, or bendable. Thesubstrate 100 may have a multi-layered structure including a layerincluding the polymer resin and an inorganic layer.

A buffer layer 111 is located on the substrate 100 to reduce or blockinfiltration of impurities, moisture, or external air from a lowerportion of the substrate 100, and to provide a flat surface on thesubstrate 100. The buffer layer 111 may include an inorganic materialsuch as an oxide material or a nitride material, an organic material, oran inorganic-organic composite material, and may have a single-layer ormulti-layered structure including the inorganic material and/or theorganic material. A barrier layer for preventing or reducinginfiltration of external air may be further provided between thesubstrate 100 and the buffer layer 111. In some embodiments, the bufferlayer 111 may include silicon oxide (e.g., SiO₂) or silicon nitride(SiNx). The buffer layer 111 may include a first buffer layer 111 a anda second buffer layer 111 b laminated therein.

In the sensor area SA, a lower electrode layer BSM may be arrangedbetween the first buffer layer 111 a and the second buffer layer 111 b.In one or more embodiments, the lower electrode BSM may be arrangedbetween the substrate 100 and the first buffer layer 111 a. The lowerelectrode layer BSM is arranged under the auxiliary thin film transistorTFT′, and may prevent or reduce degradation of the auxiliary thin filmtransistor TFT′ due to the light emitted from the component 20.

Also, the lower electrode layer BSM may be connected to a wiring GCLthat is arranged at another layer via a contact hole. The lowerelectrode layer BSM may receive a supply of the constant voltage or thesignal from the wiring GCL. For example, the lower electrode layer BSMmay receive a first power voltage ELVDD or a scan signal. Because thelower electrode layer BSM is provided with the constant voltage orsignal, a probability of generating an electrostatic discharge may benoticeably reduced. The lower electrode layer BSM may include aluminum(Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold(Au), nickel (Ni), neodymium (Nd), iridium (Ir), chrome (Cr), lithium(Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and/orcopper (Cu). The lower electrode layer BSM may have a single-layer or amulti-layered structure including one or more of the above-statedmaterials.

The main thin film transistor TFT and the auxiliary thin film transistorTFT′ may be on the buffer layer 111. The main thin film transistor TFTincludes a first semiconductor layer A1, a first gate electrode G1, afirst source electrode S1, and a first drain electrode D1, and theauxiliary thin film transistor TFT′ includes a second semiconductorlayer A2, a second gate electrode G2, a second source electrode S2, anda second drain electrode D2. The main thin film transistor TFT isconnected to the main organic light-emitting diode OLED of the displayarea DA to drive the main organic light-emitting diode OLED. Theauxiliary thin film transistor TFT′ is connected to the auxiliaryorganic light-emitting diode OLED′ of the sensor area SA to drive theauxiliary thin film transistor OLED′.

The first semiconductor layer A1 and the second semiconductor layer A2are on the buffer layer 111, and may include polysilicon. In one or moreembodiments, the first semiconductor layer A1 and the secondsemiconductor layer A2 may include amorphous silicon. In one or moreembodiments, the first semiconductor layer A1 and the secondsemiconductor layer A2 may each include an oxide of at least oneselected from the group consisting of indium (In), gallium (Ga), stannum(Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd),germanium (Ge), chrome (Cr), titanium (Ti), and zinc (Zn). The first andsecond semiconductor layers A1 and A2 may each include a channel region,and a source region and a drain region doped with impurities.

The first semiconductor layer A1 may overlap the lower electrode BSMwith the second buffer layer 111 b therebetween. In one or moreembodiments, a width of the first semiconductor layer A1 may be lessthan that of the lower electrode layer BSM, and thus, the firstsemiconductor layer A1 may entirely overlap the lower electrode layerBSM when it is projected from a direction perpendicular to (or normalto) the substrate 100.

A first gate insulating layer 112 may cover the first semiconductorlayer A1 and the second semiconductor layer A2. The first gateinsulating layer 112 may include an inorganic insulating material suchas silicon oxide (e.g., SiO₂), silicon nitride (SiNx), siliconoxynitride (SiON), aluminum oxide (Al₂O₃), titanium oxide (e.g., TiO₂),tantalum oxide (e.g., Ta₂O₅), hafnium oxide (e.g., HfO₂), and/or zincoxide (e.g., ZnO₂). The first gate insulating layer 112 may have asingle-layer or a multi-layered structure including the inorganicinsulating material.

The first gate electrode G1 and the second gate electrode G2 arearranged on the first gate insulating layer 112 so as to respectivelyoverlap the first semiconductor layer A1 and the second semiconductorlayer A2. The first gate electrode G1 and the second gate electrode G2may include one or more of Mo, Al, Cu, Ti, etc., and may each have asingle-layer or a multi-layered structure. For example, the first gateelectrode G1 and the second gate electrode G2 may each have asingle-layer structure including Mo.

A second gate insulating layer 113 may cover the first gate electrode G1and the second gate electrode G2. The second gate insulating layer 113may include an in organic insulating material such as silicon oxide(e.g., SiO₂), silicon nitride (SiNx), silicon oxynitride (SiON),aluminum oxide (e.g., Al₂O₃), titanium oxide (e.g., TiO₂), tantalumoxide (e.g., Ta₂O₅), hafnium oxide (e.g., HfO₂), and/or zinc oxide(e.g., ZnO₂). The second gate insulating layer 113 may have asingle-layer or a multi-layered structure including the inorganicinsulating material.

A first upper electrode CE2 of the main storage capacitor Cst and asecond upper electrode CE2′ of the auxiliary storage capacitor Cst′ maybe arranged on the second gate insulating layer 113.

In the display area DA, the first upper electrode CE2 may overlap thefirst gate electrode G1 arranged thereunder. The first gate electrode G1and the first upper electrode CE2 overlapping each other with the secondgate insulating layer 113 therebetween may configure the main storagecapacitor Cst. The first gate electrode G1 may be a first lowerelectrode CE1 of the main storage capacitor Cst.

In the sensor area SA, the second upper electrode CE2′ may overlap thesecond gate electrode G2 arranged thereunder. The second gate electrodeG2 and the second upper electrode CE2′ overlapping each other with thesecond gate insulating layer 113 therebetween may configure theauxiliary storage capacitor Cst′. The first gate electrode G1 may be asecond lower electrode CE1′ of the auxiliary storage capacitor Cst′.

The first upper electrode CE2 and the second upper electrode CE2′ mayeach include Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W,and/or Cu, and may have a single-layer or multi-layered structure.

An interlayer insulating layer 115 may cover the first upper electrodeCE2 and the second upper electrode CE2′. The interlayer insulating layer115 may include an insulating material such as silicon oxide (e.g.,SiO₂), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide(Al₂O₃), titanium oxide (e.g., TiO₂), tantalum oxide (e.g., Ta₂O₅),hafnium oxide (e.g., HfO₂), and/or zinc oxide (e.g., ZnO₂).

When the first gate insulating layer 112, the second gate insulatinglayer 113, and the interlayer insulating layer 115 are collectivelyreferred to as an inorganic insulating layer IL, the inorganicinsulating layer IL may have a first hole H1 corresponding to thetransmission portion TA. The first hole H1 may expose an upper surfaceof the buffer layer 111 or the substrate 100. The first hole H1 mayinclude a first opening of the first gate insulating layer 112, a secondopening of the second gate insulating layer 113, and a third opening ofthe interlayer insulating layer 115, wherein the first to third openingscorrespond to the transmission portion TA. The first to third openingsmay be separately formed through separate processes, or may beconcurrently (e.g., simultaneously) formed through one process.Alternatively, the first opening and the second opening may beconcurrently (e.g., simultaneously) formed, and the third opening may beseparately formed. When the first to third openings are obtained throughseparate processes, a step may be generated on a side surface of thefirst hole H1.

Alternatively, in one or more embodiments, the inorganic insulatinglayer IL may include a groove instead of the first hole H1 exposing thebuffer layer 111. For example, the first gate insulating layer 112 inthe inorganic insulating layer IL is arranged continuously with respectto the transmission portion TA, and the second gate insulating layer 113and the interlayer insulating layer 115 may respectively have the secondopening and the third opening corresponding to the transmission portionTA.

Alternatively, the first gate insulating layer 112 and the second gateinsulating layer 113 may be continuously arranged to correspond to thetransmission portion TA, and the interlayer insulating layer 115 mayhave the third opening corresponding to the transmission portion TA.

In one or more embodiments, the inorganic insulating layer IL may nothave the first hole H1 corresponding to the transmission portion TA. Theinorganic insulating layer IL may have the transmittance of the lightthat may be transmitted from/received by the component 20, and may nothave the hole corresponding to the transmission portion TA.

The first and second source electrodes S1 and S2 and the first andsecond drain electrodes D1 and D2 are arranged on the interlayerinsulating layer 115. The source electrodes S1 and S2 and the drainelectrodes D1 and D2 may each include one or more conductive materialsincluding Mo, Al, Cu, Ti, etc., and may have a single-layer ormulti-layered structure including one or more of the above materials.For example, the source electrodes S1 and S2 and the drain electrode D1and D2 may each have a multi-layered structure including Ti/Al/Ti.

A planarization layer 117 may cover the source electrodes S1 and S2 andthe drain electrodes D1 and D2. The planarization layer 117 may have aflat upper surface so that a first pixel electrode 221 and a secondpixel electrode 221′ arranged thereon may be planarized.

The planarization layer 117 may include a single-layer or multi-layeredstructure including an organic material or an inorganic material. Theplanarization layer 117 may include a general universal polymer(benzocyclobutene (BCB), polyimide, hexamethyldisiloxane (HMDSO),polymethylmethacrylate (PMMA), or polystyrene (PS)), polymer derivativeshaving phenol groups, acryl-based polymer, imide-based polymer, arylether-based polymer, amide-based polymer, fluoride-based polymer,p-xylene-based polymer, vinyl alcohol-based polymer, and blends (e.g.,combinations) thereof. The planarization layer 117 may include aninsulating material such as silicon oxide (e.g., SiO₂), silicon nitride(SiNx), silicon oxynitride (SiON), aluminum oxide (Al₂O₃), titaniumoxide (e.g., TiO₂), tantalum oxide (e.g., Ta₂O₅), hafnium oxide (e.g.,HfO₂), and/or zinc oxide (e.g., ZnO₂). After arranging the planarizationlayer 117, a chemical and mechanical polishing may be performed toprovide a flat upper surface.

The planarization layer 117 may have a second hole H2 corresponding tothe transmission portion TA. The second hole H2 may overlap the firsthole H1. In one or more embodiments, a lower width W2 of the second holeH2 is greater than a lower width W1 of the first hole H1, but is notlimited thereto. For example, the planarization layer 117 may cover anedge of the first hole H1 of the inorganic insulating layer IL, andthus, the width of the second hole H2 may be less than that of the firsthole H1.

The planarization layer 117 has an opening that exposes one of the firstsource electrode S1 and the first drain electrode D1 of the main thinfilm transistor TFT, and the first pixel electrode 221 may contact thefirst source electrode S1 or the first drain electrode D1 via theopening to be electrically connected to the main thin film transistorTFT.

Also, the planarization layer 117 may have an opening that exposes oneof the second source electrode S2 and the second drain electrode D2 ofthe auxiliary thin film transistor TFT′, and the second pixel electrode221′ may contact the second source electrode S2 or the second drainelectrode D2 via the opening to be electrically connected to theauxiliary thin film transistor TFT′.

The first pixel electrode 221 and the second pixel electrode 221′ mayeach include conductive oxide such as indium tin oxide (ITO), indiumzinc oxide (IZO), zinc oxide (ZnO), indium oxide (In₂O₃), indium galliumoxide, or aluminum zinc oxide (AZO). In one or more embodiments, thefirst pixel electrode 221 and the second pixel electrode 221′ may eachinclude a reflective layer including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir,Cr, or a compound thereof. In one or more embodiments, the first pixelelectrode 221 and the second pixel electrode 221′ may further include alayer including ITO, IZO, ZnO, or In₂O₃ on/under the reflective layer.In some embodiments, the first pixel electrode 221 and the second pixelelectrode 221′ may have a laminated structure including ITO/Ag/ITO.

A pixel defining layer 119 may cover boundaries of each of the firstpixel electrode 221 and the second pixel electrode 221′. The pixeldefining layer 119 overlaps each of the first pixel electrode 221 andthe second pixel electrode 221′, and has a first opening OP1 and asecond opening OP2 that define a light emission region of a pixel. Thepixel defining layer 119 increases a distance between an edge of thefirst and second pixel electrodes 221 and 221′ and an opposite electrode223 on the pixel electrodes 221 and 221′ to prevent or reduce generationof arc at the edge of the pixel electrodes 221 and 221′. The pixeldefining layer 119 may include an organic insulating material such aspolyimide, polyamide, an acrylic resin, BCB, HMDSO, and a phenol resin,and may be obtained by a spin coating, etc.

The pixel defining layer 119 may have a third hole H3 located in thetransmission portion TA. The third hole H3 may overlap the first hole H1and the second hole H2. Because the first to third holes H1 to H3 areprovided, light transmittance of the transmission portion TA may beimproved. The opposite electrode 223 that will be described later may bearranged on internal walls of the first to third holes H1 to H3.

The metal layer ML may be arranged in the first to third holes H1 to H3.The metal layer ML may be separated from the internal wall of the firsthole H1.

The metal layer ML may be introduced in order to form the transmissionhole TAH that will be described later. Alternatively, the metal layer MLmay be provided to prevent or reduce thermal diffusion when thetransmission hole TAH is formed. Functions of the metal layer ML will bedescribed later.

The metal layer ML may include various suitable kinds of metal. In someembodiments, the metal layer ML may be concurrently (e.g.,simultaneously) formed with the first and second pixel electrodes 221and 221′ by using the same material as that of the pixel electrodes 221and 221′. In some embodiments, the metal layer ML may have a stackstructure including ITO/Ag/ITO. However, one or more embodiments are notlimited thereto. In one or more embodiments, the metal layer ML may beformed concurrently (e.g., simultaneously) with the gate electrodes G1and G2, the source electrodes S1 and S2, and the drain electrodes D1 andD2 by using the same material.

A first functional layer 222 a may cover the pixel defining layer 119.The first functional layer 222 a may have a single-layer ormulti-layered structure. The first functional layer 222 a may be a holetransport layer (HTL) including a single-layer structure. Alternatively,the first functional layer 222 a may include a hole injection layer(HIL) and the HTL. The first functional layer 222 a may be integrallyformed to correspond to the main pixels Pm and the auxiliary pixels Paincluded in the display area DA and the sensor area SA, respectively.

A first emission layer 222 b and a second emission layer 222 b′ are onthe first functional layer 222 a to correspond respectively to the firstpixel electrode 221 and the second pixel electrode 221′. The firstemission layer 222 b and the second emission layer 222 b′ mayrespectively include a polymer material or a low-molecular material, andmay emit red light, green light, blue light, or white light.

A second functional layer 222 c may be formed on the first emissionlayer 222 b and the second emission layer 222 b′. The second functionallayer 222 c may have a single-layer or multi-layered structure. Thesecond functional layer 222 c may include an electron transport layer(ETL) and/or an electron injection layer (EIL). The second functionallayer 222 c may be integrally formed to correspond to the main pixels Pmand the auxiliary pixels Pa included in the display area DA and thesensor area SA. The first functional layer 222 a and/or the secondfunctional layer 222 c may be omitted.

The opposite electrode 223 is arranged on the second functional layer222 c. The opposite electrode 223 may include a conductive materialhaving a low work function. For example, the opposite electrode 223 mayinclude a semi-transparent layer including Ag, Mg, Al, Pt, Pd, Au, Ni,Nd, Ir, Cr, lithium (Li), calcium (Ca), or an alloy thereof.Alternatively, the opposite electrode 223 may further include a layerincluding ITO, IZO, ZnO, or In₂O₃ on the (semi-)transparent layerincluding the above material. The opposite electrode 223 may beintegrally formed to correspond to the main pixels Pm and the auxiliarypixels Pa included in the display area DA and the sensor area SA.

Layers from the first pixel electrode 221 to the opposite electrode 223formed in the display area DA may configure the main organiclight-emitting diode OLED. Layers from the second pixel electrode 221′to the opposite electrode 223 formed in the sensor area SA may configurethe auxiliary organic light-emitting diode OLED′.

A capping layer 250 may be on the opposite electrode 223. The cappinglayer 250 may include LiF. Alternatively, the capping layer 250 mayinclude an inorganic insulating material such as silicon nitride, and/oran organic insulating material. In one or more embodiments, the cappinglayer 250 may be omitted.

In one or more embodiments, the first functional layer 222 a, the secondfunctional layer 222 c, the opposite electrode 223, and the cappinglayer 250 may each have the transmission hole TAH corresponding to thetransmission portion TA. That is, the first functional layer 222 a, thesecond functional layer 222 c, the opposite electrode 223, and thecapping layer 250 may respectively have openings 222 aH, 222 bH, 223H,and 250H corresponding to the transmission portion TA. In one or moreembodiments, the openings 222 aH, 222 bH, 223H, and 250H forming thetransmission hole TAH may have widths that are substantially the same asone another. For example, the opening 223H in the opposite electrode 223may have a width that is substantially the same as that of thetransmission hole TAH.

Also, in one or more embodiments, the first functional layer 222 a, thesecond functional layer 222 c, and the capping layer 250 may be omitted.In this case, the opening 223H of the opposite electrode 223 may be thetransmission hole TAH.

That the transmission hole TAH corresponds to the transmission portionTA may be understood as that the transmission hole TAH overlaps thetransmission portion TA. Here, an area of the transmission hole TAH maybe less than that of the first hole H1 formed in the inorganicinsulating layer IL. For example, in FIG. 5A, a width Wt of thetransmission hole TAH is less than the width W1 of the first hole H1.Here, the area of the transmission hole TAH and the area of the firsthole H1 may be each defined as an area of the narrowest opening.

In one or more embodiments, the first functional layer 222 a, the secondfunctional layer 222 c, the opposite electrode 223, and the cappinglayer 250 may be arranged on side surfaces of the first hole H1, thesecond hole H2, and the third hole H3. In some embodiments, aninclination of the side surfaces of the first to third holes H1 to H3with respect to the upper surface of the substrate 100 may be slower(e.g., less steep or more gradual) than that of the transmission holeTAH with respect to the upper surface of the substrate 100.

Formation of the transmission hole TAH removes members such as theopposite electrode 223 from the transmission portion TA, and thus, lighttransmittance of the transmission portion TA may be greatly improved.

The main organic light-emitting diode OLED and the auxiliary organiclight-emitting diode OLED′ may be covered by an encapsulation substrate300A. The encapsulation substrate 300A may include a transparentmaterial. For example, the encapsulation substrate 300A may include aglass material. Alternatively, the encapsulation substrate 300A mayinclude a polymer resin, etc. The encapsulation substrate 300A mayprevent or substantially prevent external moisture or impurities frominfiltrating into the main organic light-emitting diode OLED and theauxiliary organic light-emitting diode OLED′.

A sealing material such as a sealant may be arranged between thesubstrate 100, on which the main organic light-emitting diode OLED andthe auxiliary organic light-emitting diode OLED′ are formed, and theencapsulation substrate 300A. The sealing material may block theexternal moisture or impurities that may be infiltrated between thesubstrate 100 and the encapsulation substrate 300A.

FIG. 5C is a cross-sectional view of a display apparatus according to anembodiment. In FIG. 5C, like reference numerals as those of FIG. 5A maydenote like elements, and detailed descriptions thereof may be omitted.

Referring to FIG. 5C, the display apparatus according to the embodimentincludes a thin film encapsulation layer 300 arranged on the cappinglayer 250. The thin film encapsulation layer 300 may include at leastone inorganic encapsulation layer and at least one organic encapsulationlayer, and regarding this, FIG. 5C shows a structure of the thin filmencapsulation layer 300, in which a first inorganic encapsulation layer310, an organic encapsulation layer 320, and a second inorganicencapsulation layer 330 are stacked. In one or more embodiments, astacking order and the number of organic and inorganic encapsulationlayers may vary.

The first and second inorganic encapsulation layers 310 and 330 mayinclude one or more inorganic insulating materials such as aluminumoxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide,silicon oxide, silicon nitride, and silicon oxynitride, and may bemanufactured by chemical vapor deposition (CVD). The organicencapsulation layer 320 may include a polymer-based material. Thepolymer-based material may include a silicon-based resin, an acryl-basedresin, an epoxy-based resin, polyimide, polyethylene, etc.

The first inorganic encapsulation layer 310, the organic encapsulationlayer 320, and the second inorganic encapsulation layer 330 may beintegrally formed to cover the display area DA and the sensor area SA.Accordingly, the first inorganic encapsulation layer 310, the organicencapsulation layer 320, and the second inorganic encapsulation layer330 may be arranged in the transmission hole TAH.

In one or more embodiments, the organic encapsulation layer 320 may beintegrally formed to cover the display area DA and the sensor area SA,but may not exist in the transmission portion TA (e.g., does not coverthe transmission portion TA). In other words, the organic encapsulationlayer 320 may have an opening corresponding to the transmission portionTA. In this case, the first inorganic encapsulation layer 310 and thesecond inorganic encapsulation layer 330 may contact each other in thetransmission hole TAH.

FIGS. 6A-6C are cross-sectional views sequentially illustrating a methodof manufacturing the display apparatus according to an embodiment.

Referring to FIG. 6A, a preliminary metal layer PML is formed in thefirst hole H1 of the inorganic insulating layer IL. The preliminarymetal layer PML may include a center portion PML-c and an edge portionPML-e. The center portion PML-c and the edge portion PML-e may beseparate from each other. In one or more embodiments, the center portionPML-c and the edge portion PML-e may be at least partially connected toeach other. The center portion PML-c may correspond to most of thetransmission portion TA. The edge portion PML-e may denote an edgeportion of the preliminary metal layer PML that is arranged to surroundthe center portion PML-c.

The preliminary metal layer PML may include one or more metals such asAg, Al, PT, Pd, Au, Ni, Mo, Ti, etc. Also, the preliminary metal layerPML may further include a layer including ITO, IZO, ZnO, or In₂O₃on/under the metal material. In one embodiment, the preliminary metallayer PML may be concurrently (e.g., simultaneously) formed with thepixel electrodes 221 and 221′ by using the same material as that of thepixel electrodes 221 and 221′.

The first functional layer 222 a, the second functional layer 222 c, theopposite electrode 223, and the capping layer 250 that are integrallyformed in the display area DA and the sensor area SA are sequentiallyformed on the preliminary metal layer PML.

Next, referring to FIG. 6B, a laser beam LP is directed to irradiate thepreliminary metal layer PML arranged in the transmission portion TA froma lower portion of the substrate 100. That is, the laser beam LPproceeds in the Z-direction from the lower surface of the substrate 100and then may be directed to irradiate to a lower surface of thepreliminary metal layer PML. The laser beam LP may have a wavelength ofthe infrared ray (IR). When the laser beam LP is the IR, thetransmittance through the substrate 100 and the buffer layer 111 isabout 80% to about 90% or greater, and thus, the laser beam LP mayefficiently reach the preliminary metal layer PML.

Because the preliminary metal layer PML includes opaque metal, thepreliminary metal layer PML may absorb the laser beam LP. Accordingly,the preliminary metal layer PML thermally expands, and the preliminarymetal layer PML, irradiated by the laser beam LP, may be lifted off fromthe substrate 100 or the buffer layer 111.

Because the preliminary metal layer PML is partially lifted off, thefirst functional layer 222 a, the second functional layer 222 c, theopposite electrode 223, and the capping layer 250 arranged on thepreliminary metal layer PML may be also removed with the preliminarymetal layer PML. Accordingly, as shown in FIG. 6C, the center portionPML-c of the preliminary metal layer PML is removed and the metal layerML partially including the edge portion PML-e may be obtained. Also, thetransmission hole TAH including the openings of the first functionallayer 222 a, the second functional layer 222 c, the opposite electrode223, and the capping layer 250 may be obtained.

When an inorganic material layer, an organic material layer, an oppositeelectrode, etc. arranged in the transmission portion TA are removed bydirecting the laser beam LP in the Z-direction, that is, from an upperportion of the substrate 100 towards the transmission portion TA, inorder to form the transmission hole TAH, a laser processing surface maybe secondarily damaged due to particles that are generated during theremoving process. However, because the lifting-off caused by the thermalexpansion of the preliminary metal layer PML is used in the embodiment,damage caused by the particles may not occur.

In some embodiments, the laser beam LP may be directed to irradiate thecenter portion PML-c, and not the entire portion of the preliminarymetal layer PML. That is, an area of a region LPA irradiated by thelaser beam LP may be smaller or less than that of the preliminary metallayer PML. To do this, in FIG. 6B, a width WL of the region LPAirradiated by the laser beam LP is less than a width WM of thepreliminary metal layer PML.

When the laser beam LP is first directed to irradiate an outermost edgeof the preliminary metal layer PML, heat may be diffused to theauxiliary pixels Pa adjacent to the transmission portion TA, andaccordingly, damage to the auxiliary pixels Pa may occur. In theembodiment, because the area irradiated by the laser beam LP is lessthan that of the preliminary metal layer PML, diffusion of the heatcaused by the laser beam LP may be prevented or reduced.

In addition, in order to prevent or reduce the thermal diffusion, thecenter portion PML-c and the edge portion PML-e of the preliminary metallayer PML may be separated from each other. Alternatively, a set (e.g.,predetermined) pattern may be formed on or at the boundary of thepreliminary metal layer PML.

FIGS. 7A-7E show shapes of the preliminary metal layer PML that may beapplied to one or more embodiments, and FIGS. 8A-8E show shapes of themetal layers ML when the preliminary metal layers PML of FIGS. 7A-7E areused.

Referring to FIG. 7A, the preliminary metal layer PML includes thecenter portion PML-c and the edge portion PML-e surrounding the centerportion PML-c. The center portion PML-c corresponds to a center of thetransmission portion TA, and the edge portion PML-e is separated fromthe center portion PML-c and surrounds the center portion PML-c. Thecenter portion PML-c may be arranged in the region LPA irradiated by thelaser beam, and the edge portion PML-e may be on an outer portion of theregion LPA or may partially overlap the region LPA.

Because the center portion PML-c and the edge portion PML-e areseparated from each other, transfer of the heat from the center portionPML-c to the edge portion PML-e may be prevented or reduced when thelaser beam is directed to irradiate the center portion PML-c, and evenwhen the laser beam is directed to irradiate the edge portion PML-e,thermal diffusion to the outside may be prevented or reduced because thearea irradiated by the laser beam is relatively small.

FIG. 8A shows a shape of the metal layer ML when the preliminary metallayer PML of FIG. 7A is applied. Referring to FIG. 8A, the centerportion PML-c of the preliminary metal layer PML is removed after beingirradiated by the laser beam, and the metal layer ML may be provided asthe edge portion PML-e or a part of the edge portion PML-e. The metallayer ML may surround an outer portion of the transmission hole TAH.

Referring to FIG. 7B, the edge portion PML-e of the preliminary metallayer PML may include a first edge portion PML-e1 and a second edgeportion PML-e2. The first edge portion PML-e1 surrounds the centerportion PML-c, and the second edge portion PML-e2 is separated from thefirst edge portion PML-e1 and surrounds the first edge portion PML-e1.

FIG. 8B shows a shape of the metal layer ML when the preliminary metallayer PML of FIG. 7B is applied. Referring to FIG. 8B, the centerportion PML-c of the preliminary metal layer PML is removed after beingirradiated by the laser beam, and the metal layer ML may be provided asthe edge portion PML-e or a part of the edge portion PML-e. The metallayer ML may include a first metal layer ML1 and a second metal layerML2. The first metal layer ML1 may surround an outer portion of thetransmission hole TAH. The second metal layer ML2 may surround the firstmetal layer ML1. In some embodiments, the first metal layer ML1 may beremoved and only the second metal layer ML2 may be arranged.

Referring to FIG. 7C, the center portion PML-c and the edge portionPML-e of the preliminary metal layer PML may be at least partiallyconnected to each other. Alternatively, the preliminary metal layer PMLmay have a plurality of holes PML-H in a boundary thereof. As such,because the plurality of holes PML-H are located at the boundary, thethermal diffusion rate from the center portion PML-c to the edge portionPML-e may be reduced.

FIG. 8C shows a shape of the metal layer ML when the preliminary metallayer PML of FIG. 7C is applied. Referring to FIG. 8C, the centerportion PML-c of the preliminary metal layer PML is removed after beingirradiated by the laser beam, and the metal layer ML may be provided asthe edge portion PML-e or a part of the edge portion PML-e. The metallayer ML may include a plurality of protrusion patterns P towards thetransmission hole TAH.

Referring to FIG. 7D, the edge portion PML-e of the preliminary metallayer PML may include a first edge portion PML-e1 and a second edgeportion PML-e2. The first edge portion PML-e1 surrounds the centerportion PML-c, and the second edge portion PML-e2 is separated from thefirst edge portion PML-e1 and surrounds the first edge portion PML-e1.Also, the first edge portion PML-e1 may be at least partially connectedto the center portion PML-c.

FIG. 8D shows a shape of the metal layer ML when the preliminary metallayer PML of FIG. 7D is applied. Referring to FIG. 8D, the centerportion PML-c of the preliminary metal layer PML is removed after beingirradiated by the laser beam, the metal layer ML may be provided as theedge portion PML-e or a part of the edge portion PML-e. The metal layerML may include a first metal layer ML1 and a second metal layer ML2. Thefirst metal layer ML1 may surround an outer portion of the transmissionhole TAH. The second metal layer ML2 is separated from the first metallayer ML1 and may surround the first metal layer ML1. The first metallayer ML1 may include a plurality of protrusion patterns P towards thetransmission hole TAH.

As shown in FIGS. 7A-7D, the preliminary metal layer PML may includevarious suitable patterns in the boundary thereof to prevent or reducethe thermal diffusion. However, one or more embodiments are not limitedthereto. As shown in FIG. 7E, the center portion and the edge portion ofthe preliminary metal layer PML may be integrally provided. Here, theregion LPA irradiated by the laser beam has an area less than that ofthe preliminary metal layer PML, so that the thermal diffusion to theedge of the preliminary metal layer PML may be prevented or reduced.

FIG. 8E shows a shape of the metal layer ML when the preliminary metallayer PML of FIG. 7E is applied. Referring to FIG. 8E, the centerportion of the preliminary metal layer PML may be removed after beingirradiated by the laser beam, and the metal layer ML may only includethe edge of the preliminary metal layer PML. The metal layer ML maysurround an outer portion of the transmission hole TAH.

FIG. 9 is a cross-sectional view partially showing a display apparatusaccording to an embodiment. In FIG. 9, like reference numerals as thoseof FIG. 5A may denote like elements, and detailed descriptions thereofmay be omitted.

Referring to FIG. 9, a metal layer ML′ may be formed on the same layerby using the same material as those of the lower electrode layer BSM. Inthis case, a through hole TAH′ may include the opening of the secondbuffer layer 111 b, the opening of the first functional layer 222 a, theopening of the second functional layer 222 c, the opening of theopposite electrode 223, and the opening of the capping layer 250.

Also, the metal layer ML′ may not be only arranged in the first hole H1,but may also overlap at least one of the first gate insulating layer112, the second gate insulating layer 113, and the interlayer insulatinglayer 115. That is, a width WM′ of the metal layer ML′ (as shown in FIG.9) may be greater than the width W1 of the first hole H1.

FIGS. 10A-10B are plan views partially showing a display apparatus 2 and3 according to embodiments.

Referring to FIG. 10A, the display apparatus 2 may further include anopening area OA.

A component 30 may be arranged under the opening area OA. The openingarea OA may be considered as a transmission portion through which lightand/or sound output from the component 30 or proceeding towards thecomponent 30 may pass from the outside. In an embodiment, when the lighttransmits through the opening area OA, a light transmittance may beabout 20% or greater, about 50% or greater, about 75% or greater, about80% or greater, about 85% or greater, or about 90% or greater. Theopening area OA is a region where a display element is not arranged, andmay not provide images. In the embodiment, the opening area OA isarranged in the display area DA and main pixels may be arrangedsurrounding the opening area OA.

The component 20 may be arranged under the sensor area SA. Because theauxiliary pixels are arranged in the sensor area SA, the sensor area SAmay provide images.

In some embodiments, a light transmittance of the opening area OA may begreater than that of the sensor area SA. Accordingly, the component 30requiring high light transmittance (e.g., a camera, etc.) may bearranged in the opening area OA, and a sensor for sensing IR may bearranged in the sensor area SA.

Referring to FIG. 10B, the sensor area SA of a display apparatus 3includes a region where the component 20 is arranged and may be arrangedat a side of the display area DA. The sensor area SA may be arrangedcorresponding to one side of the display area DA, and a plurality ofcomponents 20 may be arranged in the sensor area SA.

Also, the sensor area SA includes the auxiliary pixels Pa and thetransmission portion TA, and thus, may provide an image having aresolution lower than that of the image displayed by the display areaDA.

The sensor area SA may include the opening area OA therein. The openingarea OA may have a higher light transmittance as compared with thesensor area SA, and may include the component 30 that is highlysensitive to light. The opening area OA may be surrounded by theauxiliary pixels Pa and the transmission portion TA. The opening area OAmay have an area that is greater than that of the transmission portionTA.

FIG. 11 is a cross-sectional view taken along the line IV-IV′ and theline V-V′ of FIG. 10A. In FIG. 11, like reference numerals as those ofFIG. 5A may denote like elements, and detailed descriptions thereof maybe omitted.

Referring to FIG. 11, the display apparatus may include the opening areaOA. The opening area has an opening hole OAH corresponding to theopening area OA, and an additional metal layer ML″ may be arranged on anouter portion of the opening hole OAH. The additional metal layer ML″may at least partially surround the opening area OA or the opening holeOAH.

The additional metal layer ML″ is provided to form the opening hole OAH,and performs the same functions as those of the metal layer ML. Thedisplay apparatus may further include a first additional hole H1′corresponding to the opening area of the inorganic insulating layer IL,and the first additional hole H1′ may overlap the opening hole OAH. Theadditional metal layer ML″ may be arranged in the first additional holeH1′. Structures of the opening hole OAH and periphery thereof may besimilar to those of the transmission hole TAH and periphery thereof.

A width Wo of the opening hole OAH may be greater than the width Wt ofthe transmission hole TAH. The opening hole OAH may overlap the entirecomponent 30, whereas the transmission hole TAH may partially overlapthe component 20.

In the opening area OA, a substrate hole 100H penetrating through thesubstrate 100 may be provided. Because the opening area OA includes thesubstrate hole 100H, the light transmittance of the opening area OA maybe greater than that of the sensor area SA. Accordingly, the component30 requiring high light transmittance may be arranged under the openingarea OA.

According to the display apparatus of the embodiments, a pixel portionand a transmission portion having an improved light transmittance arearranged in the sensor area corresponding to a component such as asensor, etc., and thus, an image may be realized on a region overlappingthe component concurrently (e.g., simultaneously) with providing anenvironment in which the component may operate.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other like features oraspects in other embodiments.

While one or more embodiments have been described with reference to thefigures, it will be understood by those of ordinary skill in the artthat various suitable changes in form and details may be made thereinwithout departing from the spirit and scope as defined by the followingclaims, and equivalents thereof.

What is claimed is:
 1. A display apparatus comprising: a substratecomprising a display area and a sensor area, wherein the display areacomprises main pixels and the sensor area comprises auxiliary pixels anda transmission portion; a first pixel electrode and a first emissionlayer in each of the main pixels; a second pixel electrode and a secondemission layer in each of the auxiliary pixels; an opposite electrodeintegrally arranged in the display area and the sensor area; and a metallayer at least partially surrounding the transmission portion, whereinthe opposite electrode has an opening corresponding to the transmissionportion.
 2. The display apparatus of claim 1, further comprising: aninorganic insulating layer on the substrate, wherein the inorganicinsulating layer has a first hole corresponding to the transmissionportion, and the opposite electrode is on a side wall of the first hole.3. The display apparatus of claim 2, wherein the metal layer is in thefirst hole.
 4. The display apparatus of claim 2, wherein the opening inthe opposite electrode has an area that is less than an area of thefirst hole.
 5. The display apparatus of claim 1, further comprising: afunctional layer integrally provided in the display area and the sensorarea, the functional layer being between the first pixel electrode andthe opposite electrode and having an opening corresponding to thetransmission portion, wherein the opening of the opposite electrode andthe opening of the functional layer overlap each other and form athrough hole.
 6. The display apparatus of claim 1, wherein the metallayer comprises same material as the first pixel electrode.
 7. Thedisplay apparatus of claim 1, wherein the metal layer comprises a firstmetal layer surrounding the transmission portion and a second metallayer separated from the first metal layer, the second metal layer atleast partially surrounding the first metal layer.
 8. The displayapparatus of claim 1, wherein the metal layer comprises a protrusionextending towards the transmission portion.
 9. The display apparatus ofclaim 1, further comprising: a lower electrode layer in the sensor area,wherein the lower electrode layer is between the substrate and anauxiliary thin film transistor in the auxiliary pixel.
 10. The displayapparatus of claim 9, wherein the metal layer comprises a same materialas the lower electrode layer.
 11. The display apparatus of claim 9,further comprising: an inorganic insulating layer on the substrate,wherein the inorganic insulating layer has a first hole corresponding tothe transmission portion, and the metal layer has a width greater than awidth of the first hole.
 12. The display apparatus of claim 1, furthercomprising: a component on a lower surface of the substrate, thecomponent corresponding to the sensor area.
 13. The display apparatus ofclaim 1, wherein the substrate further comprises an opening areasurrounded by the display area, and an additional metal layersurrounding the opening area.
 14. The display apparatus of claim 13,wherein the substrate has a substrate hole corresponding to the openingarea.
 15. A method of manufacturing a display apparatus comprising asubstrate comprising a display area and a sensor area, the display areacomprising main pixels and the sensor area comprising auxiliary pixelsand a transmission portion, the method comprising: forming a preliminarymetal layer on an upper surface of the substrate, the preliminary metallayer overlapping the transmission portion; forming an oppositeelectrode on the preliminary metal layer; directing a laser beam toirradiate the preliminary metal layer from a lower surface of thesubstrate; and lifting off the preliminary metal layer, irradiated bythe laser beam, from the substrate, wherein the preliminary metal layerhas a pattern at an edge thereof.
 16. The method of claim 15, whereinthe preliminary metal layer comprises a center portion and an edgeportion separated from the center portion, the edge portion surroundingthe center portion.
 17. The method of claim 16, wherein the centerportion is at least partially connected to the edge portion.
 18. Themethod of claim 16, wherein the edge portion comprises a first edgeportion and a second edge portion, the first edge portion beingseparated from the second edge portion.
 19. The method of claim 18,wherein the first edge portion is at least partially connected to thecenter portion.
 20. The method of claim 15, wherein the laser beamcomprises an infrared ray.